1 - 2 ? 2000 ixys all rights reserved g = gate, c = collector, e = emitter symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c, limited by leads 75 a i c90 t c = 90 c40a i cm t c = 25 c, 1 ms 150 a ssoa v ge = 15 v, t vj = 125 c, r g = 22 i cm = 80 a (rbsoa) clamped inductive load, l = 30 h @ 0.8 v ces t sc v ge = 15 v, v ce = 360 v, t j = 125 c 10 s (scsoa) r g = 22 non repetitive p c t c = 25 c 280 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-264) 0.9/6 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight to-264 10 g plus247 5 g v ces = 600 v i c25 = 75 a v ce(sat) = 2.2 v t fi(typ) = 120 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1 ma, v ge = 0 v 600 v v ge(th) i c = 4 ma, v ce = v ge 47v i ces v ce = 0.8 ? v ces t j = 25 c 650 a v ge = 0 v t j = 150 c5ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.2 v 98573a (7/00) plus 247 tm (ixsx) igbt with diode plus247 tm package short circuit soa capability ixsk 40n60bd1 ixsx 40n60bd1 features international standard packages guaranteed short circuit soa capability medium frequency igbt and anti- parallel fred in one package latest generation hdmos tm process low v ce(sat) - for minimum on-state conduction losses mos gate turn-on - drive simplicity fast recovery,low leakage epitaxial diode - soft recovery with low i rm applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switch-mode and resonant-mode power supplies advantages plus 247 tm package for clip or spring mounting space savings (two devices in one package) reduces assembly time and cost to-264 aa g c e (ixsk) g c e c (tab) ixys reserves the right to change limits, test conditions, and dimensions. preliminary data
2 - 2 ? 2000 ixys all rights reserved ixsk 40n60bd1 ixsx 40n60bd1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 16 23 s pulse test, t 300 s, duty cycle 2 % c iss 3700 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 440 pf c rss 60 pf q g 190 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 45 nc q gc 88 nc t d(on) 50 ns t ri 50 ns t d(off) 110 200 ns t fi 120 200 ns e off 1.8 2.6 mj t d(on) 50 ns t ri 50 ns e on 2.2 mj t d(off) 190 ns t fi 180 ns e off 2.6 mj r thjc 0.48 k/w r thck 0.15 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, 1.8 v pulse test, t 300 s, duty cycle d 2 % i rm i f = i c90 , v ge = 0 v, -di f /dt = 100 a/ s 2 2.5 a t rr v r = 100 v i f = 1 a; -di/dt = 200 a/ s; v r = 30 v 35 ns r thjc 0.75 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = 2.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = 2.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline plus247 tm (ixsx) dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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